| 摘要 |
PURPOSE:To enable to set the voltage between a gate and a source at the desired value, by enabling to control the size of the channel width of a junction type FET. CONSTITUTION:A source electrode 8-1 wherein three source regions of the unit junction type FET are connected in parallel is connected to an n type semiconductor region 11, and the source electrode 8-2 of a unit junction type FET continuous to these three unit FETs is connected to a p<+> type semiconductor region 12. If these defectives have those wherein the voltage difference DELTAVGS between the gate and the source is out of the specifications, a laser beam is irradiated on the connectable part 13 of one wherein the voltage VGS between the gate and the source of two junction type FETs, and accordingly the electrode 8-1 and 8-2 are put into a connection state. Then, the gate width W of the FET body of smaller voltage VGS turns from W=3W1(W1 is the gate width of the unit FET) to W=4W1, and therefore the voltage VGS increases. The voltage difference DELTAVGS is decreased by such an operation, and the defective of pair characteristic can be changed into a good article. |
