MANUFACTURE OF SEMICONDUCTOR CRYSTAL

摘要

PURPOSE:To obtain easily in a short time a uniform raw material crystal for growth by enclosing >=2 kinds of material for forming semiconductor crystal into an ampule and melting and solidifying the material with giving ultrasonic oscillation to the ampule as well as the heating. CONSTITUTION:The material 12 for forming crystal of semiconductor such as Hg1-x CdxTe is filled in the ampule 11 which is then sealed. The ampule 11 is fixed to a supporting jig 13 made of metal and inserted into a reaction tube 14 made of qualz etc. This tube 14 is heated in heating furnace and ultrasonic oscillation is given to the oscillator of ultrasonic wave generator provided to the end of the jig 13 so as to oscillate the jig 13 at the time, point when the material 12 in the ampule 11 is melted. This oscillation is propagated to the ampule 11 to solidify the material 12 in the ampule 11 while stirring by the oscillation. Thereby, numbers of the process is decreased and the crystal having uniform composition of the material for epitaxial growth can be obtained in a short time.