| 摘要 |
PURPOSE:To form an a-Si film having high drak resistivity, by introducing a gaseous mixture of silane mixed with hydrogen base gas, a necessary doping gas and an inert gas selected from He, Ar, and Ne. CONSTITUTION:An aluminum drum is fixed in a vacuum reaction chamber, the chamber is evacuated to, e.g., <=5X10<-6>Torr, the surface of the drum is heated to a prescribed temp. with a sheathed heater installed in the chamber, a mixture of silane mixed with base hydrogen, a doping gas mixed with base hydrogen, and an inert gas selected from He, Ar, and Ne are introduced into the chamber, and an A-Si film is formed by generating glow discharge, thus enabling high speed formation of a photoconductive film and remarkable enhancement of productivity. |
