| 摘要 |
PURPOSE:To improve durability, etc., by forming an amorpous layer contg. N, a preventing layer for implantation of electric charge contg. atoms of periodic law table group V at the ratios satisfying the specific relation with layer thickness (t), the 1st photoconductive layer and the 2nd photoconductive layer contg. C and halogen on a substrate and using Si as a base material for these layers. CONSTITUTION:An auxiliary layer 102 consisting of amorphous Si contg. N and a preventing layer 103 for implantation of electric charge consisting of amorphous Si contg. P, As etc. of periodic law table group V at >=30 atom ppm if the thickness (t) of the layer 103 is >=30Angstrom and <0.3, and at 30 atom ppm - 100ppm if the (t) is >=30Angstrom are provided successively on a conductive substrate 101. A photoconductive layer 104 of amorphous Si and a photoconductive layer 105 contg. C and halogen are formed successively on the layer 103, whereby a photoreceptor 100 is obtained. The same auxiliary layer as the layer 102 may further be provided between the layer 103 and the layer 104. The adhesive strength between the layers is thus improved by the auxiliary layers and durability, photoelectric characteristics, etc. are improved. |
