Improvements in or relating to semi-conductor lasers.

摘要

In a semi-conductor laser of the buried active laser layer type, the laser layer is located between a layer of n-type material and a layer of p-type material, the sides of the active laser layer and at least a portion of the n-type layer and the p-type layer being covered with a plurality of thin layers with a doping sequence such that a large number of p-n junctions are included in the plurality of thin layers.