| 摘要 |
PURPOSE:To enhance durability, by continuously forming an amorphous silicon photosensitive layer and an amorphous silicon nitride layer on a substrate using >=2 kinds among gases of SiH4, B2H6, PH3, and N2 by the plasma chemical vapor deposition (CVD) method. CONSTITUTION:A photosensitive amorphous silicon layer 1 is formed on a substrate 10 by the plasma CVD method using >=2 kinds of gases of SIH4, B2H6, PH3, and N2. Then, SiH4 feed rate is lowered, feed of B2H6 is stopped, and N2 feed rate is raised to continuously vapor deposit an amorphous silicon nitride layer 2 to 50-1,000nm thickness, serviceable as a protective layer. In another case, a same layer as the layer 2 is formed on the base 10, and then, a layer 1 is formed, and finally, a protective layer 2 is formed to raise adhesion between the layer 1 and the substrate 10. The layer 2 as a protective layer prevents deterioration of the layer 1 due to corona discharge or contact with fingers and forms a photoreceptor superior in durability. |
