Means for preventing the breakdown of an insulation layer in semiconductor devices.

摘要

On a semiconductor substrate (SUB) between the source region (lb) and drain region (1a), there is provided a gate electrode (11), through an insulation layer. There is further provided a conductive layer (25) partially allowed to electrically contact this gate electrode and covering the region above the side edge portions (11a) of the gate electrode so as to mitigate the intensity of an electric field at those side edge portions.