发明名称 |
Delay circuit used in semiconductor memory device |
摘要 |
A random access read/write MOS memory device or the like employs a delay circuit in clock generators to produce small increments of delay. The delay circuit consists of a field effect transistor connected as a transfer device with its gate precharged and the gate-to-source capacitance much larger than the parasitics of the gate node. A larger transistor may be connected to the output node to improve the output waveform by holding down the output voltage at the beginning of a cycle.
|
申请公布号 |
US4401904(A) |
申请公布日期 |
1983.08.30 |
申请号 |
US19800132927 |
申请日期 |
1980.03.24 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
WHITE, JR., LIONEL S.;HONG, NGAI H. |
分类号 |
G11C7/22;G11C8/18;G11C11/4076;H03K5/00;H03K5/13;(IPC1-7):H03K5/13 |
主分类号 |
G11C7/22 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|