| 发明名称 |
Radiation heated reactor process for chemical vapor deposition on substrates |
| 摘要 |
A method of chemically vapor depositing a material on a plurality of stacked substrates comprising heating a tubular susceptor surrounding the stack to thereby heat the substrates by radiant heating.
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| 申请公布号 |
US4401689(A) |
申请公布日期 |
1983.08.30 |
| 申请号 |
US19800201437 |
申请日期 |
1980.10.28 |
| 申请人 |
RCA CORPORATION |
发明人 |
BAN, VLADIMIR S. |
| 分类号 |
C23C16/44;C23C16/455;C23C16/458;C23C16/48;(IPC1-7):B05D3/02;B05D3/14 |
主分类号 |
C23C16/44 |
| 代理机构 |
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