发明名称 Plasma deposition apparatus
摘要 A plasma deposition apparatus having a plasma formation chamber and a specimen chamber which are arranged separately. Gaseous material and microwave power are introduced to the plasma formation chamber to generate plasma by a microwave discharge through electron cyclotron resonance. The plasma is extracted to the specimen chamber from the plasma extracting orifice. In the specimen chamber, the plasma is accelerated by the effect of divergent magnetic field to irradiate the surface of the specimen so as to deposit a thin film on the specimen substrate. A high-quality thin film is formed with a high efficiency at a low temperature. Accordingly, a thin film can be deposited on a specimen substrate having a low heat resistivity. The plasma deposition apparatus is useful for manufacturing various kinds of electronic devices.
申请公布号 US4401054(A) 申请公布日期 1983.08.30
申请号 US19810257616 申请日期 1981.04.27
申请人 NIPPON TELEGRAPH & TELEPHONE PUBLIC CORPORATION 发明人 MATSUO, SEITARO;YOSHIHARA, HIDEO;YAMAZAKI, SHINICHI
分类号 C23C16/511;H01J37/32;H01L21/00;(IPC1-7):C23C13/08 主分类号 C23C16/511
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