Method of increasing minority carrier lifetime in silicon web or the like

摘要

A silicon dendrite is grown as a ribbon forming two silicon crystal layers which are separated by an interface layer which contains a large number of defects. Significant increase of minority carrier lifetime with homogeneous distribution at the outer surfaces of the two silicon crystal layers are achieved by processing the web in an atmosphere of a selected gas, e.g. oxygen, nitrogen or an inert gas, for about 30 minutes to several hours at a temperature preferably on the order of 900 DEG C.-1200 DEG C.