| 发明名称 |
Polycrystalline silicon-bonded cubic boron nitride body and method |
| 摘要 |
A well-bonded polycrystalline cubic boron nitride body is produced by providing the cubic boron nitride particles with a discontinuous coating of tungsten or molybdenum and then infiltrating them in a mass with molten silicon or silicon-base alloy.
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| 申请公布号 |
US4401443(A) |
申请公布日期 |
1983.08.30 |
| 申请号 |
US19820392903 |
申请日期 |
1982.06.28 |
| 申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
LEE, MINYOUNG;SZALA, LAWRENCE E. |
| 分类号 |
B22F3/26;B24D3/06;B24D18/00;C04B35/5831;(IPC1-7):C04B35/56 |
主分类号 |
B22F3/26 |
| 代理机构 |
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