| 摘要 |
PURPOSE:A means is set to control the partial pressure of volatile components in the raw materials for single crystal in the space between the inert melt covering the melted raw materials and the inert melt seal at the top, thus producing single crystals of highly decomposable compound having high accuracy of stoichiometric composition. CONSTITUTION:After the inside of the pressure vessel 1 is evacuated, a male- female type cap 6 is fitted on the top of the crucible 2 in the state that the pulling-up shaft 12 penetrates through the cap 6, then the B2O3 7 in the cap is melted with heater 8 to effect sealing. An inert gas is introduced into the vessel 1 and the arsenic 9 in the subcrucible 10 is heated with heater 11 to form its vapor. Thus, the inside of the crucible is filled with the vapor of arsenic and simultaneously, GaAs is heated with the heater 5 to form its melt 4 covered with B2O3 melt 15. At this time, the vapor pressure of arsenic is made controllable by the temperature of the crusible 10. Then, the seed crystal 13 is brought into contact with the melt 15 and pulled up while rotating to produce the single crystal of GaAs. |
