| 摘要 |
<p>COLUMN LINE POWERED STATIC RAM CELL A column line powered static random access memory (RAM) cell and a group of four mutually contiguous cells in an array of memory cells is disclosed. A common resistor supply node which is required in a prior art static RAM cell wherein it is centrally disposed within the group is deleted in the structural layout as disclosed in the present invention. The common source node remains, which is the ground line. In order to replace the common resistor supply node to which resistors are attached, the present invention discloses that the resistors are connected to a DATA line on a first cell, and to a DATA line on a second cell. Alternatively, these resistors can be connected to a DATA line find then respectively to a DATA line. A third alternative is where one resistor is connected to the DATA line and one resistor is connected to the DATA line. In a preferred embodiment, the principal components of each cell include a plurality of insulated gate field-effect transistors, each having a source diffusion region and a drain diffusion region formed within the substrate and a plurality of impedance devices electrically connecting the column lines to the drain diffusion of the transistors in each cell. The impedance devices extend radially from the column lines into the interior of each cell, and at least one of the diffused regions of each transistor in each cell is formed in common with a diffused region of a transistor of a contiguous cell.</p> |
