| 摘要 |
PURPOSE:To enable to form the resist mask in a high speed by a method wherein transcription exposure technique in bundle like photoresist is used for the large pattern part, and electron beam exposure technique is used for the part necessitating the fine pattern. CONSTITUTION:An oxide film 2 is formed on a semiconductor substrate 1, the resist for lump transcription is applied thereon, positioning is performed and is exposed to be developed, and a heat treatment is performed to form the resist pattern 3 of large size. The electron beam resist 5 is applied thereon, positioning is performed, and electron beam exposure is performed. When development is performed, the fine electron beam resist pattern 6 can be obtained. After then, a heat treatment is performed to compact it by burning. Accordingly the composite resist mask consisting of the large pattern 3 and the fine pattern 6 can be obtained. |
