发明名称 PHOTOTRANSISTOR ACCORDING TO INDUCTION ABSORBED LIGHT CONTROL SYSTEM
摘要 PURPOSE:To obtain the phototransistor by incorporating an induction absorbed light control element (LDSA) into a semiconductor laser, etc., controlling photon density by utilizing an optical pumping means and amplifying photons. CONSTITUTION:The LDSA (SA) is inserted into a solid laser (SE) such as a semiconductor laser, and the oscillation angle frequency of the LASER and the absorption angle frequency of the LDSA are equalized. When the photons of laser beams, etc. having hw angular frequency are projected, absorption is generated to a level (a) from a level (b). Electrons excited are supplied to the level (b) at all times by exciting electrons at a level (d) to a level (c) and spontaneously changing the electrons to the level (b) through the optical pumping means. The magnitude of the output-beam electric field of the phototransistor can be controlled by controlling the strength of the optical pumping of the LDSA, and the light change of the strength of the optical pumping of the LDSA is amplified and output beams are extracted as a large change.
申请公布号 JPS58145182(A) 申请公布日期 1983.08.29
申请号 JP19820020473 申请日期 1982.02.10
申请人 MAEDA YOSHINOBU 发明人 MAEDA YOSHINOBU
分类号 H01L33/02;H01S3/13;H01S5/00;H01S5/026 主分类号 H01L33/02
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