| 摘要 |
PURPOSE:To supply a low cost material having high reliability for the semiconductor device by a method wherein AgCl is made to be contained in the material. CONSTITUTION:AgCl is molten at the melting point of AgCl (449 deg.C) or more in a quartz crucible, it is casted to form an ingot, and after it is formed in a film type by a rolling mill, a disk of 2mm.phi diameter, 0.5mm. film thickness is formed by a press. Then the AgCl disk is put between a tungsten metalized alumina substrate and an Si chip, and is baked in a conveyer furnace in the N2 atmosphere, at 550 deg.C for the 5min peak. |
