| 摘要 |
PURPOSE:To relax effects by the variance of chromium concentration and thermal metamorphism or the outward diffusion of chromium by providing a process in which a conductivity determining impurity is implanted in a semi-insulating GaAs wafer and a process in which oxygen ions are implanted in the whole region or one part of an implantation region. CONSTITUTION:Silicon ions are implanted in the GaAs wafer under the conditions of said acceleration energy of 145KeV and the quantity of douse of 2.4X 10<12>cm<-2> in an extent of which the peak concentration reaches 10<17>cm<-3> as the first process. The conditions of acceleration energy and the quantity of douse are changed and a large number of oxygen ions are implanted so that the distribution of oxygen concentration is kept approximately constant extending over the whole implantation depth of silicon while being stacked to the silicon- ion implantation region in the second process. |
