| 摘要 |
PURPOSE:To improve the controllability of channel length electrical characteristics, and to attain the change of the performance of an element into high frequency by forming an insulating film onto the surface of a groove section and forming a metallic film onto the insulating film. CONSTITUTION:An N type region 2 is formed to one main surface of a P type silicon substrate, one main surface thereof is a (100) face, and the insulating film 3 made of SiO2, etc. is formed onto the region 2. A photo-resist film 4 is formed onto the insulating film, exposed and developed, and an opening section is shaped. The substrate 1 is etched in an anisotropic manner by using an anisotropic etching liquid, through which the etching rate of a (111) face is made lower than that of other faces, and the inverted trapezoid groove section 6 is formed. The ions of a donor impurity, such as As, P, etc. are implanted through ion implantation inclined to one inclined plane of the groove section 6 only by an incident angle theta, and an N type source region 7 is formed through heat treatment, etc. Gate insulating films 8', 8'' and an inter-layer insulating film 8 are shaped through thermal oxidation, etc., and a gate electrode 9 is formed. Lastly, the opening sections of contact windows are bored to source-drain regions 2', 2'', and metallic electrodes, etc. made of Al, etc. are formed to each opening section. |
