| 摘要 |
PURPOSE:To enable to form the pattern to be formed according to the forming process of an evaporation layer or a sputtering layer as the pattern having small width by providing the process to form the evaporation layers or the sputtering layers of the several pieces and the process to remove the layers thereof. CONSTITUTION:The evaporation layer or the sputtering layer B1 extending over the upper face of a resist layer part R1 is formed, while the evaporation layer or the sputtering layer B2 extending continuously over the upper part of the side S2 of a resist layer part R2 and the upper face of the resist layer part R2 is formed. The evaporation layer or the sputtering layer B4 extending continuously at least over the upper part of the side S4 of the evaporation layer or the sputtering layer B1 and the upper face of the evaporation layer or the sputtering layer B1 is formed. According to the removing process by the melting of a resist layer R0 having the resist layer parts R1, R2, the resist layer R0 thereof is removed together with the evaporation layers or the sputtering layers B1- B4, the evaporation layers or the sputtering layers B6, B7, and thus the desired pattern is formed according to the evaporation layer or the sputtering layer B5. |
