| 摘要 |
PURPOSE:To enable to form sharply a pattern having the desired shape, and to enable to integrate the device in a high grade by a method wherein the residue of a photo resist is removed according to an ultrasonic vibration, and the photo detecting part is made to come in contact directly with a developer at all times. CONSTITUTION:Water 14 is accommodated in an outside vessel 11, and the desired developer 15 is accommodated in an inside vessel 12. Ultrasonic waves are generated by an ultrasonic generator 13 in this condition, and when the waves thereof are transmitted to the outside vessel 11, the ultrasonic vibration is transmitted to the developer 15. When a semiconductor wafer 16 finished with the exposure treatment is set in the inside vessel 12 to be developed, even a fine opening part can be developed sharply. |
