| 摘要 |
PURPOSE:To provide a magnetron type sputtering apparatus constituted so as to be capable of forming a uniform sputtered film on a substrate, by controlling the moving speed of a plasma exciting magnet forming the part of a sputtering electrode on the way of the movement thereof. CONSTITUTION:A glass substrate 20 is attached to a rotary jig 2 in a vacuum tank 1 and the interior of the vacuum tank 1 is evacuated. After the glass substrate 20 is heated to carry out degassing treatment, an Ar-gas is introduced to carry out sputtering. The magnet holder 11 of a plasma exciting magnet 7 provided to the back surface of a Si target 21 is rotated to the same direction as the rotary jig 2 and a sputtering region is rotated to the same direction. On the way of the rotation of said magnet holder 11, a position detecting sensor 30-1 is provided and, when the detection hole of a positioning plate 26 attached on the rotary shaft same to the magnetic holder 11 is detected, the speed control of a speed control motor 29 is carried out so as to obtain a rotary speed optimum in the rotary position thereof. |
