| 摘要 |
PURPOSE:To carry out reactive ion etching treatment certainly and automatically, in applying etching treatment to an object to be etched, by detecting the final point of the aforementioned etching treatment from the variation in the intensity of generated light with a predetermined wavelength. CONSTITUTION:For example, a mixed gas consisting of a CF3Br gas and a Cl2 gas is introduced into a reactive ion etching apparatus 12 as a reactive gas from an inlet 8 while the predetermined amount thereof is exhausted from an exhaust port 11. In the next step, the internal pressure of a vacuum container 2 is set to a reduced pressure state of 0.1torr and predetermined high frequency electric power is applied between a high frequency electrode 3 and an earth electrode 4 by a high frequency power source 6 to carry out discharge therebetween. In generating plasma by this discharge in this state, light emission generated in the reactive gas atmosphere in the container 2 is observed by a spectrometer apparatus 10. When etching treatment is completed, a predetermined output signal is supplied to a current variation sensor apparatus from the appartus 10 to stop the operation of a discharge mechanism. That is, the stoppage of the etching treatment is automatically carried out and the defficiency or excessiveness of the etching treatment due to a worker's operation is prevented. |
