| 摘要 |
PURPOSE:To prevent the generation of scattering pieces, and to eliminate the need for electric conduction treatment by forming wiring to be coupled into a predetermined region on a substrate while being separated only by a space, which can be connected, by the melting and fluidization of wiring material. CONSTITUTION:An oxide film 11 is formed onto the semiconductor substrate 10. Wiring to be coupled 12a, 12b are formed onto the oxide film 11 while being separated only by the space L, which can be connected, by the melting and fluidization of wiring. Wiring 12a, 12b are formed by a metal, such as Al, Mo, W, Ti or the like or a silicide, etc., such as polycrystalline silicon, MoSi2 or the like. The shape and arrangement of the opposite regions of wiring 12a, 12b are set so that each wiring 12a, 12b is connected positively and the effective length of the opposite regions is lengthened. According to wiring structure 15 for coupling constituted in this manner, the opposite regions of wiring to be coupled 12a, 12b are heated and melted through the irradiation, etc. of laser beams 14, thus extremely easily connecting both wiring 12a, 12b. |
