APPARATUS FOR PRODUCING ELECTROPHOTOGRAPHIC SENSITIVE BODY

摘要

PURPOSE:To produce a sensitive body of amorphous Si having superior characteristics at a high rate by converting part of a reactive gas into plasma in the preceding plasma space before feeding into the main plasma space when an amorphous Si layer is formed on a cylindrical support drum by plasma CVD. CONSTITUTION:The vacuum vessel of a plasma CVD apparatus is evacuated from the exhaust port 8 and gaseous SiH4 mixed with gaseous B2H6 as a doping gas is fed from the gas feeding inlets 5. An internal electrode 7 fitted with a cylindrical support drum 6 is heated to 250-450 deg.C with a heater 9 and rotated. High frequency voltage is the applied among the internal electrode 7, an external electrode 1 and an electrode 4 in the preceding plasma chamber 3 on the gas feeding side to generate plasma in the chamber 3 and the main plasma chamber 2. Thus, a boron doped amorphous Si hydride layer as a photosensitive layer is formed on the surface of the drum 6 at a high rate.