| 摘要 |
<p>PURPOSE:To improve light receiving and emitting efficiency by a method wherein the light direction and current direction are made perpendicular to each other by means of applying etching process using X-ray or electronic beams to multiple layered film material. CONSTITUTION:The semiconductor material of each repeated part of p type, n type semiconductor is vapor grown and oxide film is vapor grown thereon then n type region is coated with resist film for partial beam irradiation while not irradiated oxide film is etched for n type impurity diffusion. The residual oxide film is melted and overall oxide film surface is vapor grown again while the p type region is processed likewise for p type diffusion. Meanwhile D represents the direction in which light is irradiated and the electromotive force generated by this light flows in the direction of G on the line FG perpendiculate to p-n junction A. On the other hand, the light is illuminated and irradiated in the direction of E at the junction A by means of supplying current in the direction of G in stead of irradiating the light coming in the direction of D. The metal to be the electrodes adding current for taking out and illuminating said electromotive force is grown to come into contact with surfaces B and C.</p> |
