发明名称 MANUFACTURE OF EVAPORATION PHOTORESIST OF ANIONIC POLYMERIZABLE MONOMER AND PRODUCT THEREOF
摘要 A relief image is prepd. by (a) providing a substrate whose surface activates polymerisation of a monomer of formula CHR = CXY (I) (X, Y = strong electron withdrawing gps., and R = H, or, when X and Y are both CN, 1-4C alkyl), (b) treating the substrate surface with a photosensitive cpd. which releases an acid on exposure to active or ionising radiation; (c) imagewise exposing the substrate to release the acid; and (d) treating the substrate with vapours of monomer (I) to form a polymeric coating in the unexposed areas. An article, pref. a SiO2 coated Si wafer, carrying an image prepd-. as above is also claiied.
申请公布号 JPS62247356(A) 申请公布日期 1987.10.28
申请号 JP19870029457 申请日期 1987.02.10
申请人 LOCTITE IRELAND LTD 发明人 JIYON UTSUZU;JIYON EMU RUUNII
分类号 C08F2/48;C08F2/54;G03C1/72;G03C1/74;G03F7/004;G03F7/039;G03F7/16;G03F7/26;G03F7/40;H01L21/027 主分类号 C08F2/48
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