| 摘要 |
PURPOSE:To reduce a write current greatly, and to enable complete erasure and to perform repetitive operation stably, by performing the writing and erasure of a storage element which utilizes Josephson effect while placing a superconductor thin-film line of the second kind in an invariably conductive state by providing a resitive thin-film line. CONSTITUTION:On a substrate 6, an insulator thin-film line 5 is provided between the resistor thin-film line 3 and superconductor thin-film line 1 of the second kind for information storage to form a superconductive storage element. For writing to this element, a bias current IB is flowed from the upper electrode thin-film line 2 of a superconductor to the thin-film line 1 and a current IR large enough to holding the thin-film line 1 above critical temperature and make it invariably conductive is flowed to the resistance line 3 to allow magnetic lines of force to enter the thin-film line 1 (shown by A); and then the current IR is ceased and eddy flux is left at the thin-film line 1, thus completing the writing. For erasure, only current IR is flowed without flowing the current IB to make the thin-film line 1 invariably conductive, so that the erasure is performed completely even if there is a pin (irregular eddy flux) in the line 1. The writing requires the current nearly one eightieth as great as usual. |
