发明名称 METHOD FOR REDUCING PHOTO FATIGUE OF SILICON TYPE PHOTOSENSITIVE BODY
摘要 PURPOSE:To reduce photo fatigue generated by light irradiation, by executing exposure by use of a light source which contains light of wavelength being approximate to 650nm, and also selectively eliminates light >=650nm wavelength. CONSTITUTION:On an aluminum support 21, a photoconductive layer whose main component is amorphous silicon is formed. In case when light of various wavelength is irradiated to a silicon photosensitive body obtained in this way, longer the wavelength more the degree of fatigue increases. On the other hand, when the wavelength it too short, sufficient sensitivity is not obtained. In this way, the surface of the silicon type photosensitive body is charged, and after that, when an image is exposed by use of a light source which contains light of wavelength being approximate to 650nm, and also eliminates light >=650nm wavelength, a difference of charged potential before and after irradiation of light is stable for a considerable period. Accordingly, by constituting in this way, photo fatigue generated by light irradiation can be reduced.
申请公布号 JPS58143364(A) 申请公布日期 1983.08.25
申请号 JP19820026070 申请日期 1982.02.22
申请人 RICOH KK 发明人 KAGEYAMA YOSHIYUKI;AKEYOSHI HIDEKI
分类号 G03G21/00;G03G5/08;G03G15/04 主分类号 G03G21/00
代理机构 代理人
主权项
地址