Fabricating pn junction semiconductor layers - for use in solar battery, by ionised cluster beam deposition

摘要

Solid state pn junction element is formed (a) providing a semiconductor substrate of one conductivity type, (b) forming a vapour of a semiconductor material of opposite type, (c) injecting the vapour into a vacuum region of =10-2 torr to form clusters of atoms. This is followed by (d) bombarding the clusters with electrons to ionise them, and (e) accelerating the ionised clusters by an electric field to barbary the substrate and form a coating layer and a pn junction. Used esp. in prodn. of thin-film solar cells. Method provides high quality, high crystallinity thin film layers with good economy and productivity.