| 摘要 |
PURPOSE:To prevent wiring from breakage, by a method wherein when an opening for the wiring coating is formed to a thick insulation film on an element region and contacted to the region, an upper opening is made larger than a lower opening, and a metal layer of sufficient thickness is obtained also at lateral wall of the opening. CONSTITUTION:A thick field oxide film is formed on periphery of P type Si substrate 1, and source, drain area 2 is formed within the substrat 1 surrounded by the oxide film, and gate electrode is formed between the source area and drain area through a gate insulation film. A lower wiring 3 of polycrystalline Si is formed on the field oxide film. Whole surface is covered by PSG film 4 and Si3N4 film 7 is applied thereon. A photo resist film 8 having an opening 8' corresponding to the area 2 and the wiring 3 is formed. An opening attaining the region 2 and the wiring 3 is formed later, and dimension of the opening is wide at upper side and Al upper wiring 9 is applied to fill the opening. In this constitution, the wiring 9 within the opening becomes sufficiently thick and therefore the breakage is prevented. |
