| 摘要 |
PURPOSE:To improve the junction characteristic in a poly Si thin film, by providing a low density N layer between a high density N layer and a direct or low density P layer by an ion implantation. CONSTITUTION:N<-> layers 5 and 6 are formed between N<+> layers 1 and 2, and a thin film substrate 3 by self-alignment to a gate wiring 4. The gate wiring is of a poly Si, an Al, a high melting point metal or the silicide thereof. By this constitution, the leakage current in a state of ''gate-off'' reduces by approx. one figure in a poly Si thin film semiconductor device which is rich in mass productivity and has mobility larger than that of an amorphous Si. Therefore, when it is used for the switching transistor array of a panel of liquid crystal display, a clear display can be obtained. |
