| 摘要 |
PURPOSE:To relax the restriction in selecting the material of an electrode and thus contrive the improvement of the yield by a method wherein SnO2 or ITO, etc. is determined as the material of an opposed electrode, and a metallic electrode is arranged at the part of connection to the external electrode or junction to the switching element. CONSTITUTION:SnO2 is evaporated on a glass substrate and etched using flon, and accordingly the patterns of a common electrode 7 and discrete electrodes 8 are formed. CdSe 3 is evaporated and heat-treated at 600 deg.C in a small amount of O2. At this temperature, the SnO2 is sufficiently stable, and the photoconductivity characteristic of the CdSe does not vary. The CdSe 3 is etched by the mixed solution of nitric acid and phosphoric acid resulting in the formation of sensor elements 3. Next, Cr and Au are successively evaporated and laminated on a part of the common electrode 7 and the discrete electrode 8 by using a mask, and a patterning is performed, accordingly electrodes 5 and 6 are provided. By this constitution, the restriction in selecting the material of an electrode for the CdSe of extremely bad chemical resistance or the compound with it as the base material can be relaxed, and therefore an image reading element can be formed with good yield. |
