| 摘要 |
PURPOSE:To reduce case capacitance by extending a shield segment part between the gate and the inner end of lead of source mutually adjacent to the chip mounting area. CONSTITUTION:The leads 5 of gate G1 and gate G2 are provided on the line extending from the leads 1, 4 of source and drain, while the internal end is extended in the vicinity of chip mounting part 2 in the resin package 7. The internal end of each lead is connected 6 with the chip 3. A pair of shield segments 8 are projected from the chip mounting portion 2 and respectively extending between the internal ends of two gate leads 5 and between the internal ends of gate lead 5 and drain lead. In this structure, shielding is realized due to existence of projected segment 8, case capacitance is reduced, and thereby a high frequency dual gate MOSFET having a small amount of feedback to the input side from the output side can be obtained. |
