发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To reduce steep stepwise differences the lower layer wiring pattern forms and thus prevent the short-circuit between the uppermost wirings by a method wherein a photo resist film is left on the region except for the part of the uppermost layer wiring, and thereafter a base metallic film and an Au plated wiring are superposed. CONSTITUTION:A through hole 8 for connection is provided on a layer insulation film 2, and the resist 9 is spin-coated on the part except for the Au plated wiring of the uppermost layer. Next, the double base film 3 of Ti-Pt is adhered, then a photo resist pattern 4 equal to the resist 9 is superposed again, and the exposed base film 3 is Au plated 5 resulting in the formation of a wiring pattern. Then, the mask 4 is removed, and, with the Au plated film 5 as a mask, the unnecessary base metallic film 3 is removed by vertically irradiating Ar ions. Thereat, since the steep stepwise difference of the lower layer wiring 1 is reduced by the resist 9, the base metallic film 3 can be perfectly removed in the same manner as the flat part. Finally the resist 9 is removed into the completion.
申请公布号 JPS58142547(A) 申请公布日期 1983.08.24
申请号 JP19820025411 申请日期 1982.02.18
申请人 NIPPON DENKI KK 发明人 OOZEKI NOBORU
分类号 H01L21/3205;H01L21/302;H01L21/306;H01L21/3065 主分类号 H01L21/3205
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