发明名称 |
Method of forming metal lines |
摘要 |
A method of forming metal lines is described for semiconductor processing wherein a line mask is initially ion milled to provide a mask contour which promotes the onset of chemical etching at the base of the mask. This produces a metal line that has a tapered cross-sectional dimension wherein the base of the line is narrower than the top.
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申请公布号 |
US4400257(A) |
申请公布日期 |
1983.08.23 |
申请号 |
US19820451818 |
申请日期 |
1982.12.21 |
申请人 |
RCA CORPORATION |
发明人 |
TAYLOR, GORDON C. |
分类号 |
C23F1/02;G03F7/36;G03F7/40;H01L21/027;H01L21/285;H01L21/338;(IPC1-7):C23C15/00 |
主分类号 |
C23F1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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