发明名称 Method of forming metal lines
摘要 A method of forming metal lines is described for semiconductor processing wherein a line mask is initially ion milled to provide a mask contour which promotes the onset of chemical etching at the base of the mask. This produces a metal line that has a tapered cross-sectional dimension wherein the base of the line is narrower than the top.
申请公布号 US4400257(A) 申请公布日期 1983.08.23
申请号 US19820451818 申请日期 1982.12.21
申请人 RCA CORPORATION 发明人 TAYLOR, GORDON C.
分类号 C23F1/02;G03F7/36;G03F7/40;H01L21/027;H01L21/285;H01L21/338;(IPC1-7):C23C15/00 主分类号 C23F1/02
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