| 摘要 |
PURPOSE:To obtain a phototransistor or its array having excellent photosensitivity by forming nonsingle crystalline semiconductors in NIPIN or PINIP structure and forming I-layers between an emitter and a base and between the base and a collector in a laminating manner. CONSTITUTION:A transparent conductive film 2 made of titanium oxide to which impurities, such as ITO tin oxide, antimony, etc. are added is formed onto the glass 1 of a light transmitting substrate in the thickness of 500-3,000Angstrom . The N type first nonsingle crystalline semiconductor S1, 3 is formed onto the upper surface of the film 2 in the thickness of 50-500Angstrom , the intrinsic or substantially intrinsic second nonsingle crystalline semiconductor S2, 4 in the thickness of 100-3,000Angstrom , the P type third nonsingle crystalline semiconductor S3, 5 in the thickness of 100-3,000Angstrom , the intrinsic or substantially intrinsic fourth nonsingle crystalline semiconductor S4, 6 in the thickness of 1,000Angstrom -10mum, and the N type fifth nonsingle crystalline semiconductor S5, 7 in the thickness of 100-3,000Angstrom through a plasma CVD method. Only in region in which the external extracting electrode 9 of the first electrode 2 is formed is covered previously with a cover mask to prevent the formation of the semiconductors at that time, and the externally lead out electrode 9 and a second electrode 8 are formed through a vacuum deposition method. |
