| 摘要 |
PURPOSE:To obtain the bipolar-transistor having high dielectric resistance and excellent reliability by forming the reinforcing region of a base region formed through an opening for forming an emitter region. CONSTITUTION:Boron is diffused into a collector region 3 through an opening 7 for the base region, and the P type base region 8 is formed. An SiO2 film 9 is formed into the opening 7 for forming the base region, and the opening 10 for shaping the emitter region is formed. Boron as a P type impurity is diffused previously from the opening before forming the emitter region, and the P type reinforcing region 11 is formed. The reinforcing region 11 is the base region effectively, distorts a P-N junction surface between a base and a collector in the vicinity of the interface with a thermal oxide film 12 of a side surface, and forms the deep junction end 12. A polycrystalline silicon layer 13 in 2,000Angstrom is shaped onto the upper surface of the opening 10 for forming the emitter region, arsenic is diffused with high concentration and penetrated into a substrate, and the N type emitter region 14 is obtained in the base region. |
