| 摘要 |
PURPOSE:To realize a high-speed semiconductor device, signal retardation time thereof is reduced, by connecting a plurality of input protective devices having small time constants in parallel with a bonding pad for input and communicating at least one output terminal with a gate for input. CONSTITUTION:The input protective device 26 constituted by a resistance element 22 and a capacitance element 24 and the input protective device 27 constituted by a resistance element 23 and a capacitance element 25 are connected in parallel on viewing from the bonding pad 21 side. The capacitance value of the capacitance element 24 is made smaller than that of the capacitance element 25 and further smaller than capacitance value which has been used, gate protective dielectric resistance drops in response to a section reduced, and the section reduced is compensated by the capacitance element 25. Accordingly, the gate of the transistor 24 is protected because much of the discharge currents of the bonding pad 21 flow into the input protective device 27 when high voltage by static electricity, etc. is applied to the bonding pad, and signal retardation time until voltage reaches the gate of the transistor 24 from the bonding pad 21 is reduced when high-speed input signal voltage used for circuit operation is applied. |
