| 摘要 |
PURPOSE:To interrupt a conductor pattern positively, and to operate a redundant circuit by implanting the ions of insulating impurity atoms or impurity atoms giving conductivity into a substrate region or a semiconductor layer from the recessed section of a protective film. CONSTITUTION:A thin SiO2 film 12 is formed onto a p type silicon semiconductor substrate 11 through thermal oxidation treatment. A first resist pattern 13 in which a section corresponding to a diffusion-layer forming prearranged section is bored is formed. Phosphorus ions are implanted into the substrate 11 under predetermined conditions while using the resist pattern 13 as a mask, and n<+> type diffusion layers (conductor patterns) 141, 142 are formed. The resist pattern 13 is removed, and the protective film 15 is formed onto the SiO2 film 12. A second resist pattern is shaped onto the protective film 15, and the protective film 15 and the SiO2 film 12 are removed through etching in succession. A thin oxide film 16 is formed onto the surface being exposed of the substrate 11 through thermal oxidation treatment. |
