| 摘要 |
PURPOSE:To fine an element, and to improve the characteristics of the element largely by selectively forming an insulating film to the side end section of a semiconductor pattern or a conductor pattern while using an organic-matter residual pattern as an etching mask. CONSTITUTION:An undoped polycrystalline silicon layer is deposited onto the whole surface, arsenic ions are implanted, a CVD-SiO2 film 5 on a gate electrode 6, the residual CVD-SiO2 10' of the side end section of the gate electrode and a field oxide film 3 function as masks, arsenic ions are implanted into a silicon substrate 1 under groove sections 161, 162 through the undoped polycrystalline silicon layer on said groove sections 161, 162, and n<+> type impurity layers 171, 172 are formed through heat treatment. An Al film is deposited onto the whole surface under vacuum, the Al film is patterned and source-drain extracting Al electrodes 13', 14' are formed, an arsenic doped polycrystalline silicon layer is patterned while using the electrodes as masks, and arsenic doped polycrystalline silicon patterns 181, 182 are formed under each electrode 13', 14'. |
