发明名称 PHOTOMASK
摘要 PURPOSE:To prevent the electrostatic breakdown of chip patterns and to enhance the yield of masks and the probe yield of wafers, by forming a bridge- shaped metallic pattern with electric conductivity between the chip patterns. CONSTITUTION:A bridge-shaped chromium pattern 12 is formed at each corner of chip patterns 11 formed on a glass substrate 10 so as to electrically connect the patterns 11 to each other without causing trouble during scribing. The pattern 12 is required only to provide electric conductivity between the patterns 11, and about 10mum interval is enough for the pattern 12. Static electricity generated in the mask during exposure for printing flows to the periphery of the mask through the pattern 12, and no discharge is caused between the patterns 11, so the electrostatic breakdown of the patterns 11 can be prevented. Thus, the life of the mask is elongated, and since the electrostatic breakdown of the patterns in a working mask to be printed and in a wafer is hardly caused, the yield of working masks and the probe yield of wafers are enhanced.
申请公布号 JPS58140742(A) 申请公布日期 1983.08.20
申请号 JP19820021155 申请日期 1982.02.15
申请人 HITACHI SEISAKUSHO KK 发明人 DAN MASAHIRO
分类号 G03F1/00;G03F1/40;G03F1/54;H01L21/027 主分类号 G03F1/00
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