| 摘要 |
PURPOSE:To detect any minor unevenness in illumination and exposure on a wafer by a method wherein fine patterns are provided on the surface of mask regularly or irregularly. CONSTITUTION:The lines almost at the level of marginal development and fine patterns 2 consisting of space are provided on the surface of unevenness detecting mask 1 while the patterns 2 are transcripted on wafer 3 through the light channel from a light source 7 via the mask 1, flat mirrors 8, 11, concave and convex mirrors 9, 10. In this case, vertical lines 4, horizontal lines 5 and oblique lines 6 respectively represent the unevenness in exposure (scanning), illumination and coating of resist especially by dark color. Through these procedures, the unevenness in exposure device may be detected easily and precisely. The detecting mask may be provided with small holes of fine patterns 2A almost at the level of marginal development making use of dots on the mask 1. |
