| 摘要 |
PURPOSE:To obtain a high speed semiconductor device which has withstand voltage and large safety operation region by differentiating the base widths to increase the amplification factor of the output side at the amplification factor of the drive side transistor or locally controlling the lifetime when forming a plurality of transistors on a semiconductor substrate to become a common collector in a Darlington connection. CONSTITUTION:The P type base regions 2, 3 of two transistors are diffused in an N type Si substrate 1 to become a common collector, and an N<+> type region 4 to become an emitter is formed on the surface of the region 2 at the drive transformer side. Then, N<+> type regions 4, 5 to become emitters of drive and output sides are respectively diffused in the regions 2, 3, and only the region 4 is diffused twice, thereby increasing the depth. In this manner, the base width WB1 of drive stage is formed smaller than that WB2 of output stage. Or, the drive side is covered with a mask 7, radiation 8 is emitted to the output side, and the amplification factor may be lowered. |
