摘要 |
The carry generating unit (1) contains a first MOS transistor (2), a second MOS transistor (3), a third MOS transistor (11), a first negator (4), a second negator (14) and a NOR gate (13). The input of the first negator (4) is connected to the input (5) of a first preparation function. The output of the first negator (4) and the drain of the first MOS transistor (2) are connected to a transmission output (6). The gate of the first MOS transistor (2) and the input of the second negator (14) are connected to one input (7) of the second preparation function. Sources of the first two MOS transistors (2, 3) and the first input of the NOR gate (13) are connected to a transmission input (8) of the carry generating unit (1). The drain of the second MOS transistor (3) is connected to the line of a feed source, whilst the pulse input of the first negator (4) and the gate of the second MOS transistor (3) are connected to a clock signal line (10). The source (12) of the third MOS transistor (11) is connected to a common line and the drain of this transistor is connected to the drain of the first MOS transistor (2). The second input of the NOR gate (13) is connected to the output (16) of the negator (14) whilst the output (15) of the NOR gate (13) is connected to the gate of the third MOS transistor (11). <IMAGE>
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申请人 |
DZCHUNIAN,VALERIJ LEONIDOVIC;KOVALENKO,SERGEJ SAVVIC;MASEVIC,PAVEL ROMANOVIC;NAUMENKOV,VLADISLAV ROMANOVIC |
发明人 |
LEONIDOVIC DZCHUNIAN,VALERIJ;SAVVIC KOVALENKO,SERGEJ;ROMANOVIC MASEVIC,PAVEL;ROMANOVIC NAUMENKOV,VLADISLAV |