| 摘要 |
PURPOSE:To obtain a light emitting element which does not emit a light at the part except the desired light emitting pattern by selectively forming by a diffusion method a P-N junction on the surface of a semiconductor substrate, then removing part or all of a diffusion preventive film used for diffusion, forming newly an insulating film, and wiring electrode on the film. CONSTITUTION:An N type GaAsP layer 17 is epitaxially grown on an N type GaAs substrate 11, and the entire surface is covered with diffusion preventive film 12, e.g., Al2O3, Si3N4 or the like. Then, a hole is opened at the film 12 corresponding to the pattern to be emitted, and Zn is diffused in the exposer layer 17, thereby forming a P type layer 15 to become a light emitting pattern. A P type layer 16 might be produced on the part except the light emitting pattern by pinholes 13 produced at the film 12. Accordingly, part of the film 12 is removed in a thicknesswise direction, a PSG film 18 is newly covered on the remaining film 12a, and electrode 14 is wired in contact with the layer 15 on the film 18 while burying the layer 16. |
