发明名称 |
SEMICONDUCTOR ABSOLUTE PRESSURE TRANSDUCER ASSEMBLY |
摘要 |
A semiconductor pressure transducer assembly comprising a silicon diaphragm assembly and a glass covering member. The silicon diaphragm assembly has a circular diaphragm portion of thin silicon which is formed using etching, and a thick supporting portion therearound. Piezoresistive elements of a piezoresistive bridge circuit and conducting paths for electrically connection thereof are formed on the silicon diaphragm assembly. On a surface of the silicon diaphragm assembly, a passivating layer of silicon dioxide are formed in uniform thickness, and further on a surface of the passivating layer is formed a layer of polysilicon on the supporting portion of the silicon diaphragm assembly. In the passivating layer, a contacting window is formed, through which the polysilicon layer is electrically connected to the silicon diaphragm assembly. The covering member of borosilicate glass having a circular well is mounted and bonded onto the silicon diaphragm assembly in contact with the polysilicon layer using Anodic Bonding method. And the processed silicon diaphragm assembly has a flat surface thereof, on which the piezoresistive elements and the conducting paths are constructed using Ion Implantation method, or reforming a silicon dioxide layer thereon after removing another silicon dioxide layer used as mask in diffusing process. |
申请公布号 |
DE2965860(D1) |
申请公布日期 |
1983.08.18 |
申请号 |
DE19792965860 |
申请日期 |
1979.09.27 |
申请人 |
HITACHI, LTD. |
发明人 |
YAMADA, KAZUJI;SUZUKI, SEIKO;NISHIHARA, MOTOHISA;KAWAKAMI, KANJI;SATO, HIDEO;KOBORI, SHIGEYUKI;KANZAWA, RYOSAKU;TAKAHASHI, MINORU;MINORIKAWA, HITOSHI |
分类号 |
G01L9/04;G01L9/00;H01L23/08;H01L29/84;(IPC1-7):G01L9/06 |
主分类号 |
G01L9/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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