| 摘要 |
PURPOSE:To enhance the laser manufacturing yield without loss of laser resonance surface by forming etching grooves in the directions perpendicular to and parallel to the light emitting region while avoiding the region when a semiconductor wafer in which many striped light emitting regions are formed is cleaved to form individual pellets, and dividing it from the groove. CONSTITUTION:An N type InP buffer layer, an In1-xGaxAsyP1-y active layer, a P type InP clad layer are laminated and grown on an N type InP substrate, a current block layer is formed in the vicinity of the active layer, a P type InP layer or a P type In1-x, Gax, Asy, P1-y layer is epitaxially grown as the final layer as a striped laser. In this structure, before N type and P type ohmic elecdrodes are formed, lateral and longitudinal cleaving patterns 103 are opened by avoiding the light emitting regions 102 of the wafer 101. In this case, the depth of the pattern 103 is formed to a value which does not affect the influence to the active layer in the vertical direction to the region 102. |
