| 摘要 |
A metallic silicide, for example, titanium silicide, layer is formed on a substrate by depositing titanium and silicon thereon, and subsequently pulse heating the substrate to a temperature and in a time sufficient to cause interdiffusion of the titanium and silicon and reaction thereof to form titanium silicide. The titanium and silicon may be deposited as alternate layers or co-sputtered. By pulse heating to a temperature greater than 900 DEG C within 10 seconds, and subsequent cooling, the low resistivity form of titanium silicide (titanium disilicide) is obtained. Alternatively, repeated pulse heating at lower temperatures, between 600 and 900 DEG C, can also result in the formation of titanium silicide. The very short process times involved minimise dopant redistribution and adjacent layer interdiffusion effects, when titanium silicide is produced by such a pulse heating technique for semiconductor device electrodes and/or interconnections, in comparison with conventional furnace annealing process. |
