发明名称 Zone purification of silicon in a reactive plasma
摘要 Boron is removed from silicon by zone melting purification. A jet of hot plasma obtained by high frequency excitation is directed on a zone of a bar of silicon to be purified. The plasma is formed from a mixture of a plasma-producing gas, such as argon, and an amount of oxygen which is sufficiently low to avoid oxidization of silicon.
申请公布号 US4399116(A) 申请公布日期 1983.08.16
申请号 US19810287789 申请日期 1981.07.28
申请人 ELECTRICITE DE FRANCE (SERVICE NATIONAL) 发明人 AMOUROUX, JACQUES;MORVAN, DANIEL
分类号 C30B13/00;C30B13/22;(IPC1-7):C01B33/02 主分类号 C30B13/00
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