发明名称 |
Zone purification of silicon in a reactive plasma |
摘要 |
Boron is removed from silicon by zone melting purification. A jet of hot plasma obtained by high frequency excitation is directed on a zone of a bar of silicon to be purified. The plasma is formed from a mixture of a plasma-producing gas, such as argon, and an amount of oxygen which is sufficiently low to avoid oxidization of silicon.
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申请公布号 |
US4399116(A) |
申请公布日期 |
1983.08.16 |
申请号 |
US19810287789 |
申请日期 |
1981.07.28 |
申请人 |
ELECTRICITE DE FRANCE (SERVICE NATIONAL) |
发明人 |
AMOUROUX, JACQUES;MORVAN, DANIEL |
分类号 |
C30B13/00;C30B13/22;(IPC1-7):C01B33/02 |
主分类号 |
C30B13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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